high-temperature epitaxy

high-temperature epitaxy
aukštatemperatūrė epitaksija statusas T sritis radioelektronika atitikmenys: angl. high-temperature epitaxy vok. Hochtemperaturepitaxie, f rus. высокотемпературная эпитаксия, f pranc. épitaxie à haute température, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • épitaxie à haute température — aukštatemperatūrė epitaksija statusas T sritis radioelektronika atitikmenys: angl. high temperature epitaxy vok. Hochtemperaturepitaxie, f rus. высокотемпературная эпитаксия, f pranc. épitaxie à haute température, f …   Radioelektronikos terminų žodynas

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Space Vacuum Epitaxy Center — is the 8,000 square feet of laboratory space in 3 buildings on the University of Houston campus. The SVEC facilities contains equipment dedicated to thin film deposition, processing and characterization of III V compound semiconductor, high… …   Wikipedia

  • Hybrid vapour phase epitaxy — (HVPE) is used for high rate crystal growth. For example during Gallium nitride growth, HVPE uses ammonia(NH3), and GaCl2, which is formed by Hydrogen chloride flowing over Gallium melt, as sources with purified N2 as carrier gas. The growth is… …   Wikipedia

  • Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… …   Wikipedia

  • Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… …   Wikipedia

  • Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

  • Ultra high vacuum — (UHV) is the vacuum regime characterised by pressures lower than about 10−7 pascal or 100 nanopascals ( 10−9 torr). UHV requires the use of special materials in creating the vacuum system, extreme cleanliness to maintain the vacuum system, and… …   Wikipedia

  • Hochtemperaturepitaxie — aukštatemperatūrė epitaksija statusas T sritis radioelektronika atitikmenys: angl. high temperature epitaxy vok. Hochtemperaturepitaxie, f rus. высокотемпературная эпитаксия, f pranc. épitaxie à haute température, f …   Radioelektronikos terminų žodynas

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